منابع مشابه
Concurrent use of write-once memory
We consider the problem of implementing general sharedmemory objects on top of write-once bits, which can be changed from 0 to 1 but not back again. In a sequential setting, write-once memory (WOM) codes have been developed that allow simulating memory that support multiple writes, even of large values, setting an average of 1 + o(1) write-once bits per write. We show that similar space efficie...
متن کاملHow to Reuse a "Write-Once" Memory
Storage media such as digital optical disks, PROMS, or paper tape consist of a number of "write-once" bit positions (wits); each wit initially contains a "0" that may later be irreversibly overwritten with a "1." It is demonstrated that such "write-once memories" (woms) can be "rewritten" to a surprising degree. For example, only 3 wits suffice to represent any 2-bit value in a way that can lat...
متن کاملProbabilistic performance of write-once memory with Linear Wom codes - Analysis and insights
The level of write-once memory cells (e.g., Flash) can only be raised individually. Bulk erasure is possible, but only a number of times (endurance) that decreases sharply with increasing cell capacity or cell-size reduction. A device’s declared storage capacity and the total amount of information that can be written to it over its lifetime thus jointly characterize it. Write-once memory (WOM) ...
متن کاملNumber : Title : Concurrent use of write - once memory
We consider the problem of implementing general shared-memory
متن کاملRetired-page utilization in write-once memory - A coding perspective
In write-once memory (e.g., Flash), a cell’s level can only be raised, and erasure is only in bulk. The total number of erasures (endurance) is limited, and drops sharply with technology shrinkage and with cell-capacity increase. The normalized write capacity (ratio of total amount of data that can be written to storage capacity) drops similarly. Various coding schemes enable overwrites at the ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Information Theory
سال: 2013
ISSN: 0018-9448,1557-9654
DOI: 10.1109/tit.2013.2255732